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| LED - Chip Preliminary Radiation Red Type MQW 10.04.2007 Technology AlInGaP/Si EL-630-21 rev. 01/07 Electrodes N (cathode) up typ. dimensions in m (25 m) 1070 typ. thickness 225 (25) m cathode gold alloy, 1.0 m anode gold alloy, 1.5 m 1070 Optical and Electrical Characteristics Tamb = 25C, unless otherwise specified Test Parameter conditions Forward voltage Forward voltage2 Reverse voltage Radiant power1 Radiant power2 Luminous intensity1 Luminous intensity2 Peak wavelength1 Dominant wavelength2 Spectral bandwidth at 50% Switching time 1 2 Symbol Min Typ Max Unit IF = 20 mA IF = 350 mA IR = 10 A IF = 20 mA IF = 350 mA IF = 20 mA IF = 350 mA IF = 20 mA IF = 350 mA IF = 20 mA IF = 20 mA VF VF VR e e IV IV P D 0.5 tr, tf 620 270 10 4.1 1.8 2.4 2.3 V V V 5.4 100 350 6500 630 622 18 70/35 640 mW mW mcd mcd nm nm nm ns Measured on bare chip on TO-18 header Measured on bare chip on Cu-carrier, 10s current flow (information only) Labeling Type EL-630-21 Lot N V(typ) [mcd] VF(typ) [V] Quantity Packing: Chips on adhesive film with wire-bond side on top Note: All measurements carried out with EPIGAP equipment EPIGAP Optoelektronik GmbH, D-12555 Berlin, Kopenicker Str.325 b, Haus 201 Tel.: +49-30-6576 2543, Fax : +49-30-6576 2545 1 of 1 |
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